Dr. Alaaeddine Ramadan is an associate professor in the Computer Engineering Department at Ahlia University. He received his Ph.D. in computer and communication engineering in 2010 from the University of Limoges, France. In addition to his academic degrees, he is a Cisco CCNA certified trainer. He has published many research papers in well-recognized journals and conferences in the field of active device modeling and RF power amplifier design. He is an active member of IEEE and a reviewer for IEEE transactions. His research interests include various aspects of digital and analog integrated circuit design and design methodologies.

Education

• PhD in Computer & Communication Engineering.

Specialty: High‐frequency electronics, photonics and systems

(Graduated with highest distinction with the congratulations of the jury).

University of Limoges, France.

• DEA (Master Degree) in Circuits, Systems Micro and Nanotechnology for High Frequencies and Optical Communications.

University of Limoges, France

• Master 1 Electronics Electrotechnics Automatics (EEA).

University of Limoges (France)

• Bachelor in Computer and Communication Engineering
  Lebanese University, Faculty of Technology, Saida, Lebanon.

Awards

• A scholarship in 2005 from Nouvelle-Aquitaine region to do his M.Sc. degree at the, Faculty of Science, University of Limoges, France.
• A scholarship in 2007 from the French Space Agency (CNES) and Thales Alenia Space to pursue his Ph.D. degree at XLIM research institute, University of Limoges, France.

Publications

• Hassan, H. Maarouf, A. Ramadan, “SPEECH TO SIGN LANGUAGE RECOGNITION SYSTEM”, 21th LAAS International Science Conference. Advanced Research for Better Tomorrow, March 2015, USJ University, Lebanon.
• Ramadan, “Computational Modeling of Digital Electronic Devices”, 20th LAAS International Science Conference. Advanced Research for Better Tomorrow, March 2014, Lebanese University, Lebanon.
• Medrel, A. Ramadan, J.M. Nebus, P.Bouysse, L.Lapierre and J.F. Villemazet, “High Efficiency Class B GaN Power Amplifier With Dynamic Gate Biasing For Improved Linearity”.

Published in: Electronics Letters (Volume: 48, Issue: 18, August 30 2012), Page(s): 1136 – 1137, Print ISSN: 0013-5194.

• Ramadan, T. Reveyrand, A. Martin, J-M. Nebus, P. Bouysse, L.Lapierre, J-F. Villemazet, S.Forestier, “Two stage GaN HEMT amplifier with Gate-source voltage shaping for efficiency versus bandwidth enhancements”.

Published in: IEEE Transactions on Microwave Theory and Techniques, Year: 2011, Volume: 59, Issue: 3, Pages: 699 – 706, DOI: 10.1109/TMTT.2010.2095033.

• J Jean-Michel Nebus, Alaaeddine Ramadan, Philippe Bouysse, Tibault Reveyrand, Denis Barataud, et al.. High Efficiency Two Stage Microwave GaN Power Amplifier with Gate Source Waveform Shaping of the Power Stage. 41st European Microwave Conference, EuMW 2011, Oct 2011, Manshester, United Kingdom. W08 – 23 p., 2011.
• Ramadan, T. Reveyrand, A. Martin, J.M. Nebus, P. Bouysse, L. Lapierre, J.F. Villemazet and S. Forestier, “Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers”.

Published in: Electronics Letters (Volume: 46, Issue: 8, April 15 2010), Page(s): 570 – 572, Print ISSN: 0013-5194.

• Ramadan, T. Reveyrand, J-M. Nebus, P. Bouysse, L.Lapierre, J-F. Villemazet, , S.Forestier,”Efficiency enhancement of GaN Power Amplifiers over wide bandwidth by an active control of gate source waveforms” ,5th Space Agency – MOD Round Table Workshop on GaN Component Technologies, 2-3 september 2010, European Space Agency ESA ESTEC Noordwijk, The Netherlands.
• Ramadan, T. Reveyrand, A. Martin, J.M. Nebus, P. Bouysse, L. Lapierre, J.F. Villemazet and S. Forestier, “Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape”.

Published in: Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European. Pages: 1840 – 1843, Print ISBN: 978-1-4244-4748-0.

• Ramadan, A.Martin, D.Sardin, T.Reveyrand, J-M.Nebus, P.Bouysse, L.Lapierre, J.F.Villemazet, S.Forestier, “Study and Design of High Efficiency Switch Mode GaN Power Amplifiers at L-band Frequency”, 978-1-4244-3834-1/09 ACTEA IEEE, July 15-17, 2009 Lebanon.
• Ramadan, “Conception d’un amplificateur de puissance en mode de commutation en bande L et en technologie GaN”, 9e Edition JC2 – Journées Jeunes Chercheurs du Centre National d’Etude Spatiale CNES, octobre 2009, Toulouse, France.
• Ramadan, D. Sardin, T. Reveyrand, J-M. Nebus, P. Bouysse, L. Lapierre, J-F. Villemazet, S. Forestier, “Analyse comparative des classes en commutation (F, F-1, E) pour l’amplification de puissance en technologie GaN”, 16èmes Journées Nationales Microondes, 27-28-29 Mai 2009 – Grenoble-France.
• Ramadan, T. Reveyrand, J-M. Nebus, P. Bouysse, L. Lapierre, J-F. Villemazet, S. Forestier, “Conception d’un amplificateur de puissance à 2 étages intégrant la préformation de la tension de commande d’entrée”, 17èmes Journées Nationales Microondes, 18-19-20 Mai 2011 – Brest-France.